IRFR220, IRFU220, SiHFR220, SiHFU220
www.vishay.com
Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 5 - Typical Gate Charge vs. Gate-to-Source Voltage
Vishay Siliconix
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Fig. 7 - Maximum Safe Operating Area
S14-0555-Rev. E, 07-Apr-14
4
Document Number: 91270
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
IRFR2407TRRPBF MOSFET N-CH 75V 42A DPAK
IRFR2905ZTRRPBF MOSFET N-CH 55V 42A DPAK
IRFR310TRLPBF MOSFET N-CH 400V 1.7A DPAK
IRFR320TRRPBF MOSFET N-CH 400V 3.1A DPAK
IRFR3412TRPBF MOSFET N-CH 100V 48A DPAK
IRFR3418TRPBF MOSFET N-CH 80V 70A DPAK
IRFR3504TRPBF MOSFET N-CH 40V 30A DPAK
IRFR3706CTRLPBF MOSFET N-CH 20V 75A DPAK
相关代理商/技术参数
IRFR220TRPBF 功能描述:MOSFET N-Chan 200V 4.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR220TRR 功能描述:MOSFET N-Chan 200V 4.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR220TRRPBF 功能描述:MOSFET N-Chan 200V 4.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR221 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFR222 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFR2229A 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFR224 功能描述:MOSFET N-Chan 250V 3.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR224A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.8A I(D) | TO-252AA